Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy - Strömberg - 2021 - physica status solidi (a) - Wiley Online Library
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Growth of III–V semiconductors and lasers on silicon substrates by MOCVD - ScienceDirect
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Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
a) Schematic and dimensions of GaSb growth on V-grooved Si using an... | Download Scientific Diagram
Selective Area Growth - an overview | ScienceDirect Topics
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Selective Area Growth - an overview | ScienceDirect Topics
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Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
Schematic process flow for (a–d) silicon (100) substrate preparation... | Download Scientific Diagram
Size effects of nano-pattern in Si(1 1 1) substrate on the selective growth behavior of GaN nanowires by MOCVD - ScienceDirect
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III–V material integration, IBM Research Zurich
Coatings | Free Full-Text | Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells
